Tescan GAIA3 SEM-FIB

Tescan GAIA3 SEM-FIB

Intro
Instruments
Recharge Rates
Training Sign-Up
Requesting Testing Service
Location & Info
Rates
Access & Training
Location   1150 Engineering Hall
Contact:   Dr. Jian-Guo Zheng
Email:   jzheng@uci.edu
   
EMERGENCY:   9-1-1
UCI Police:   (949) 824-5223
UCI Medical Center:   (714) 456-6123
 
  Usage ($) Training ($)
UC Campuses
 451/302 40.00
Other Academic
 58.51/392 52.00
Industrial
 1351/902 120.00

 

NOTE: 1On-Peak rate. 2Off-Peak rate. Typical training time: 5 Hours. Training is billed per hour per person. Usage is billed per hour.

Keycard Access: Daytime or 24/7
Instrument Access: Daytime or 24/7

 

NOTE: Keycard access is required at all times to enter the TEM Labs. Users who have yet trained are not permitted to operate any lab instruments. Users who wish to bring guests are required to notify the Lab Manager in advance.

Description

The GAIA-3 GMH FIB-SEM is TESCAN’s newest, highest-end flagship dualbeam instrument. It has a unique three-lens electron optical design capable of dedicated modes for extreme high-resolution imaging (magnetic immersion mode, just like the FEI Magellan), enhanced depth of focus, undistorted ultra-low magnification imaging, and live 3D stereo imaging. The smart chamber design of the GAIA GMH FIB-SEM instrument allows for the simultaneous milling and collection of EBSD patterns without the need to move the sample. This flexibility is unique to TESCAN and will provide best-in-class accuracy and throughput for EBSD and EDS. The 3D-EDS and EBSD reconstructions are critical for understanding the structure and chemistry of materials. This FIB-SEM is the only such system that can be integrated with a time of flight secondary ion mass spectrometer (TOF-SIMS), which is planned for the future.

Instrument Features

FIB

  • Ga ion source
  • Operating voltage: 0.5kV to 30kV
  • Operating current: 1pA to 60 nA

SEM

  • Field emission gun
  • Operating voltages: 500V to 30 kV

Popular Applications

  • SEM/EDS analysis
  • SEM/EBSD analysis
  • FIB lithography
  • TEM sample preperation

Instrument Specifications

  • Electron beam resolution in BDM: 0.7nm @ 15kV, 1.4nm @ 1kV, 2.2nm @ 200V
  • Focus Ion Beam resolution: sub-2 nm images performed with gallium at 1pA, 2.5 nm resolution guaranteed

Useful Information

Instruction & Brochure

Tescan GAIA3 Brochure

Application Notes

SOP & Safety Documents

Standard Operating Procedures

Vendor Contact