The JEOL Grand ARM is 60-300 kV S/TEM, which offers sub-Ångstrom spatial resolution at 300 kV for atom-by-atom characterization and chemical mapping. Equipped with a cold field emission gun and configured with a wide gap pole piece (>6 mm), the Grand ARM is an ideal instrument for a variety of in situ experiments to study the structure, properties, and dynamic behavior of nanostructured materials under applied fields, stress, and reactive environments.

The Grand ARM uses a unique hybrid high-angle annular dark-field (HAADF) STEM detector and features a dedicated annular bright-field (ABF) detector. This capability is critical for the atomic-scale structure and property analysis of materials containing both light and heavy elements. In addition, the Grand ARM is integrated with a new generation direct electron detection system (the Gatan K2 IS/Summit), which enables rapid imaging (up to 1600fps), 4D-STEM, low-dose imaging, and counting EELS.

Also, the microscope is equipped with a Gatan OneView camera (4K x 4K) for optimum imaging, biprism for electron holography, dual 100 mm2 silicon drift detectors (SDD) for energy-dispersive X-ray spectroscopy (EDS), and Gatan 965 GIF Quantum ER imaging filter with dual-energy range EELS (DualEELS), suitable for the rapid mapping of elements with atomic resolution.

Instrument Features

Atomic resolution S/TEM imaging and spectroscopy at 60, 80, 200, and 300kV using HAADF, MAADF, BF or ABF, BEI detectors
Dual 100mm2 SDDs for super rapid EDS mapping
Atomic resolution imaging of dynamic events using Gatan K2 IS (in situ) up to 1600fps
Fast STEM EELS and energy-filtered TEM mapping using Gatan GIF Quantum equipped with both CCD and K2 summit
4D STEM capability using K2 IS (up to 1600fps)
K2 Summit for super high resolution (8K x 8K in super-resolution mode) low-dose imaging
Biprism for electron holography
In situ biasing, gas-solid reaction, and heating with atomic resolution STEM and TEM
Electron Tomography to study nanostructure in three dimensions

Popular Applications

Atomic resolution STEM imaging of various materials using various STEM detectors (HAADF, MAADF, BF, ABF, and BEI)
Atom-by-atom chemical analysis using EDS or EELS
Virtual STEM imaging and differential phase contrast (DPC) using 4D STEM
Atomic resolution imaging in S/TEM during an in-situ experiment
Low-dose imaging of beam-sensitive sample using K2 Summit
Atomic resolution gentle S/TEM of 2D materials at 60 and 80kV

Instrument Specifications

TEM information limit: 0.076 nm (300 kV), 0.087 nm (200 kV), 0.1 nm (80 kV) and 0.108 nm (60 kV)
STEM HAADF resolution: 0.063 nm (300 kV), 0.08 nm (200 kV), 0.1 nm (80 kV) and 0.136 nm (60 kV)
EELS Energy resolution: 0.34 eV (300 kV), 0.33 eV (200 kV), 0.31 eV (80 kV), 0.30 eV (60 kV).
EDS Energy resolution: 121.5 eV